schottky rectifier 75 amp, 150v 75lq150 description/features case style case outline and dimensions - smd-1 www.irf.com 1 high efficiency series the 75lq150 schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. it is packaged in the hermetic surface mount smd-1 ceramic package. the device's forward voltage drop and reverse leakage current are optimized forthe lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. full mil-prf-19500 quality conformance testing is available on source control drawings to tx, txv and s quality levels. ? hermetically sealed ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? surface mount ? lightweight cathode anode anode 1 2 3 major ratings and characteristics characteristics 75lq150 units i f(av) 75 a v rrm 150 v i fsm @ tp = 8.3ms half-sine 700 a v f @ 75apk, t j =125c 0.78 v t j ,t stg operating and storage -55 to 150 c 6. pins 2 & 3 are internally shorted. pd-94190e
75lq150 2 www.irf.com part number 75lq150 v r max. dc reverse voltage (v) v rwm max. working peak reverse voltage (v) voltage ratings 150 parameters limits units conditions i f(av) max. average forward current 75 a 50% duty cycle @ t c = 95c, square waveform see fig. 5 i fsm max. peak one cycle non - repetitive 700 a @ t p = 8.3 ms half-sine surge current absolute maximum ratings parameters limits units conditions t j max.junction temperature range -55 to 150 c t stg max. storage temperature range -55 to 150 c r thjc max. thermal resistance, junction 0.75 c/w dc operation see fig. 4 to case wt weight (typical) 2.6 g die size (typical) (2)158 x158 mils case style smd-1 thermal-mechanical specifications parameters limits units conditions v fm max. forward voltage drop 1.18 v @75a t j = -55c see fig. 1 1.45 v @150a 1.06 v @75a t j = 25c 1.44 v @150a 0.78 v @75a t j = 125c 0.96 v @150a i rm max. reverse leakage current 0.2 ma t j = 25c v r = rated v r see fig. 2 32 ma t j = 125c c t max. junction capacitance 1600 pf v r = 5v dc (1mhz, 25c) l s typical series inductance 5.9 nh measured from center of cathode pad to center of anode pad electrical specifications pulse width < 300s, duty cycle < 2%
75lq150 www.irf.com 3 fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - max. forward voltage drop characteristics 0 40 80 120 160 reverse voltage -v r (v) 100 1000 10000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c 0 40 80 120 160 reverse voltage - v r (v) 0.0001 0.001 0.01 0.1 1 10 100 r e v e r s e c u r r e n t - i r ( m a ) 125c 75c 25c 100c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 forward voltage drop - v f (v) 1 10 100 1000 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c
75lq150 4 www.irf.com fig. 5 - max. allowable case temperature vs. average forward current fig. 4 - max. thermal impedance z thjc characteristics 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0 20 40 60 80 100 120 average forward current - i f(av) (a) 0 20 40 60 80 100 120 140 160 180 a l l o w a b l e c a s e t e m p r a t u r e - ( c ) 75lq150 r thjc = 0.75c/w dc i r world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2010
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